期刊
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B
卷 26, 期 4, 页码 1420-1424出版社
A V S AMER INST PHYSICS
DOI: 10.1116/1.2958254
关键词
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资金
- NSF RII [EPS-0554328]
- WVU Research Corp
- WV EPSCoR Office
The effects of surface treatment using Ar and Cl-2/BCl3 inductively coupled plasmas on the rectifying characteristics of Pt/Au contacts to AlxGa1-xN (x=0.1-0.5) were investigated. Plasma treatment increased the conductivity of Al0.1Ga0.9N surfaces, making the rectifying contacts into Ohmic contacts. For higher Al-content AlGaN, the Schottky diodes turned leaky after Cl-2/BCl3 plasma treatment, where damage creation and etching occur simultaneously, whereas the diodes become more rectifying upon Ar plasma exposure, in which plasma damage accumulates. A time-dependent study of Ar plasma treatment supports the hypothesis that the energy level of plasma damage in high-Al content AlGaN may be damage density dependent, and damage accumulation during Ar plasma exposure results in a high-resistivity region compensated by deep-level defect states. (C) 2008 American Vacuum Society.
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