4.2 Article

Etching rate, optical transmittance, and charge trapping characteristics of Al-rich Al2O3 thin film fabricated by rf magnetron cosputtering

相关参考文献

注意:仅列出部分参考文献,下载原文获取全部文献信息。
Article Physics, Applied

Non-volatile Al2O3 memory using nanoscale al-rich Al2O3 thin film as a charge storage layer

Shunji Nakata et al.

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS (2006)

Article Physics, Applied

Nonvolatile memory using Al2O3 film with an embedded Al-rich layer -: art. no. 223110

S Nakata et al.

APPLIED PHYSICS LETTERS (2005)

Article Engineering, Electrical & Electronic

Non-volatile Al2O3 memory using an Al-rich structure as a charge-storing layer

S Nakata et al.

ELECTRONICS LETTERS (2005)

Article Engineering, Electrical & Electronic

Charge trapping memory structures with Al2O3 trapping dielectric for high-temperature applications

M Specht et al.

SOLID-STATE ELECTRONICS (2005)

Article Engineering, Electrical & Electronic

Using electron cyclotron resonance sputtering in the deposition of ultrathin Al2O3 gate dielectrics

Y Jin et al.

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B (2003)