期刊
PROCEEDINGS OF THE NATIONAL ACADEMY OF SCIENCES OF THE UNITED STATES OF AMERICA
卷 112, 期 15, 页码 4523-4530出版社
NATL ACAD SCIENCES
DOI: 10.1073/pnas.1416581112
关键词
black phosphorus; nanoelectronic; optoelectronic; anisotropic; 2D material
资金
- Army Research Laboratory [W911NF-14-2-0113]
- Office of Naval Research [N00014-14-1-0565]
- Air Force Office of Scientific Research [FA9550-14-1-0277]
- National Science Foundation [CRISP NSF MRSEC DMR-1119826]
- [NSF/DMR-1004147]
- Division Of Materials Research
- Direct For Mathematical & Physical Scien [1004147] Funding Source: National Science Foundation
One hundred years after its first successful synthesis in the bulk form in 1914, black phosphorus (black P) was recently rediscovered from the perspective of a 2D layered material, attracting tremendous interest from condensed matter physicists, chemists, semiconductor device engineers, and material scientists. Similar to graphite and transition metal dichalcogenides (TMDs), black P has a layered structure but with a unique puckered single-layer geometry. Because the direct electronic band gap of thin film black P can be varied from 0.3 eV to around 2 eV, depending on its film thickness, and because of its high carrier mobility and anisotropic in-plane properties, black P is promising for novel applications in nanoelectronics and nanophotonics different from graphene and TMDs. Black P as a nanomaterial has already attracted much attention from researchers within the past year. Here, we offer our opinions on this emerging material with the goal of motivating and inspiring fellow researchers in the 2D materials community and the broad readership of PNAS to discuss and contribute to this exciting new field. We also give our perspectives on future 2D and thin film black P research directions, aiming to assist researchers coming from a variety of disciplines who are desirous of working in this exciting research field.
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