期刊
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A
卷 27, 期 3, 页码 503-514出版社
A V S AMER INST PHYSICS
DOI: 10.1116/1.3106627
关键词
annealing; attenuated total reflection; crystal structure; electron diffraction; hafnium compounds; infrared spectra; lattice constants; MOCVD; permittivity; thin films; X-ray diffraction; X-ray photoelectron spectra; yttrium
The cubic phase of HfO2 was stabilized by addition of yttrium in thin films grown on Si/SiO2 by metal-organic chemical vapor deposition. The cubic phase was obtained for contents of 6.5 at. % Y or higher at a temperature as low as 470 degrees C. The complete compositional range (from 1.5 to 99.5 at. % Y) was investigated. The crystalline structure of HfO2 was determined from x-ray diffraction, electron diffraction, and attenuated total-reflection infrared spectroscopy. For cubic films, the continuous increase in the lattice parameter indicates the formation of a solid-solution HfO2-Y2O3. As shown by x-ray photoelectron spectroscopy, yttrium silicate is formed at the interface with silicon; the interfacial layer thickness increases with increasing yttrium content and increasing film thickness. The dependence of the intrinsic relative permittivity epsilon(r) as a function of Y content was determined. It exhibits a maximum of similar to 30 for similar to 8.8 at. % Y. The cubic phase is stable upon postdeposition high-temperature annealing at 900 degrees C under NH3.
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