期刊
APPLIED PHYSICS LETTERS
卷 106, 期 19, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.4919897
关键词
-
资金
- Helmholtz Nanoelectronic Facility (HNF) at the Forschungszentrum Julich
- EU Graphene Flagship project [NECT-ICT-604391]
- ERC [280140]
The encapsulation of graphene in hexagonal boron nitride provides graphene on substrate with excellent material quality. Here, we present the fabrication and characterization of Hall sensor elements based on graphene boron nitride heterostructures, where we gain from high mobility and low charge carrier density at room temperature. We show a detailed device characterization including Hall effect measurements under vacuum and ambient conditions. We achieve a current-and voltage-related sensitivity of up to 5700 V/AT and 3 V/VT, respectively, outpacing state-of-the-art silicon and III/V Hall sensor devices. Finally, we extract a magnetic resolution limited by low frequency electric noise of less than 50 nT/root Hz making our graphene sensors highly interesting for industrial applications. (C) 2015 AIP Publishing LLC.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据