期刊
APPLIED PHYSICS LETTERS
卷 106, 期 4, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.4906612
关键词
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资金
- Japan Society for the Promotion of Science (JSPS) [25246020]
- Grants-in-Aid for Scientific Research [25889041, 25246020, 13J00339] Funding Source: KAKEN
We demonstrate large-area (similar to 600 mu m), (111)-oriented, and high-crystallinity, i.e., pseudo-single-crystalline, germanium (Ge) films at 275 degrees C, where the temperature is lower than the softening temperature of a flexible substrate. A modulated gold-induced layer exchange crystallization method with an atomic-layer deposited Al2O3 barrier and amorphous-Ge/Au multilayers is established. From the Raman measurements, we can judge that the crystallinity of the obtained Ge films is higher than those grown by aluminum-induced-crystallization methods. Even on a flexible substrate, the pseudo-single-crystalline Ge films for the circuit with thin-film transistor arrays can be achieved, leading to high-performance flexible electronics based on an inorganic-semiconductor channel. (C) 2015 AIP Publishing LLC.
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