期刊
APPLIED PHYSICS LETTERS
卷 106, 期 18, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.4919761
关键词
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资金
- Dutch Organization for Fundamental Research on Matter (FOM)
- Marie Curie Career Integration Grant
We present microwave-frequency NbTiN resonators on silicon, systematically achieving internal quality factors above 1M in the quantum regime. We use two techniques to reduce losses associated with two-level systems: an additional substrate surface treatment prior to NbTiN deposition to optimize the metal-substrate interface and deep reactive-ion etching of the substrate to displace the substrate-vacuum interfaces away from high electric fields. The temperature and power dependence of resonator behavior indicate that two-level systems still contribute significantly to energy dissipation, suggesting that more interface optimization could further improve performance. (C) 2015 AIP Publishing LLC.
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