期刊
APPLIED PHYSICS LETTERS
卷 106, 期 15, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.4918679
关键词
-
资金
- Ministry of Science and Technology, Taiwan [102-2221-E009-134-MY3]
Based on the phenomenon of endurance degradation problem caused by no sufficient oxygen ions for resistive switching, we use the oxygen plasma treatment in HfO2 layer to increase the extra available oxygen ions in resistive random access memory devices. To avoid the Ti top electrode directly absorbing the additional oxygen ions from HfO2 layer with oxygen plasma treatment, a thin HfO2 film is inserted to separate them. Therefore, the endurance degradation can be suppressed in the present structure. High speed (30 ns) and large endurance cycles (up to 10(10) cycles) are achieved in this device structure for next generation nonvolatile memory application. (C) 2015 AIP Publishing LLC.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据