16 Boolean logics in three steps with two anti-serially connected memristors

Memristor based logic gates that can execute memory and logic operations are regarded as building blocks for non Von Neumann computation architecture. In this letter, Ta/GeTe/Ag memristors were fabricated and showed reproducible binary switches between high-resistance and low-resistance states. Utilizing a structure with two anti-serially connected memristors, we propose a logic operation methodology, based on which arbitrary Boolean logic can be realized in three steps, and the logic result can be nonvolatilely stored. A functionally complete logic operation: NAND is further verified by HSPICE simulation and experiments. The implementation of logic-in-memory unit may stimulate the development of future massive parallel computing. (C) 2015 AIP Publishing LLC.