期刊
APPLIED PHYSICS LETTERS
卷 106, 期 7, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.4913432
关键词
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资金
- Research Grants Council of Hong Kong [614312, 614813]
We report the use of highly ordered, dense, and regular arrays of in-plane GaAs nanowires as building blocks to produce antiphase-domain-free GaAs thin films on exact (001) silicon. High quality GaAs nanowires were grown on V-grooved Si (001) substrates using the selective aspect ratio trapping concept. The 4.1% lattice mismatch has been accommodated by the initial GaAs, a few nanometer-thick with high density stacking faults. The bulk of the GaAs wires exhibited smooth facets and a low defect density. An unusual defect trapping mechanism by a tiara-like structure formed by Si undercuts was discovered. As a result, we were able to grow large-area antiphase-domain-free GaAs thin films out of the nanowires without using SiO2 sidewalls for defect termination. Analysis from XRD x-rocking curves yielded full-width-at-half-maximum values of 238 and 154 arc sec from 900 to 2000 nm GaAs thin films, respectively, indicating high crystalline quality. The growth scheme in this work offers a promising path towards integrated III-V electronic, photonic, or photovoltaic devices on large scale silicon platform. (C) 2015 AIP Publishing LLC.
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