期刊
APPLIED PHYSICS LETTERS
卷 106, 期 20, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.4921437
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资金
- Office of Naval Research Multidisciplinary University Research Initiative (ONR-MURI)
- National Science Foundation through NSF [DMR-1309868]
- NSF MRSEC [DMR-1119826]
- Division Of Materials Research
- Direct For Mathematical & Physical Scien [1309868] Funding Source: National Science Foundation
Two dimensional electron gases (2DEGs) formed at the interfaces of oxide heterostructures draw considerable interest owing to their unique physics and potential applications. Growing such heterostructures on conventional semiconductors has the potential to integrate their functionality with semiconductor device technology. We demonstrate 2DEGs on a conventional semiconductor by growing GdTiO3-SrTiO3 on silicon. Structural analysis confirms the epitaxial growth of heterostructures with abrupt interfaces and a high degree of crystallinity. Transport measurements show the conduction to be an interface effect, similar to 9 x 10(13) cm(-2) electrons per interface. Good agreement is demonstrated between the electronic behavior of structures grown on Si and on an oxide substrate, validating the robustness of this approach to bridge between lab-scale samples to a scalable, technologically relevant materials system. (C) 2015 AIP Publishing LLC.
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