期刊
APPLIED PHYSICS LETTERS
卷 106, 期 14, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.4917504
关键词
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资金
- National High-Tech Research and Development Program of China [2014AA032606]
- National Natural Science Foundation of China [61306110, 61361166007, 11174008, 61404004]
- National Basic Research Program of China [2012CB619306]
- Beijing Municipal Science and Technology Project [Z131100005913001]
A large lattice-mismatch induced stress control technology with a low Al content AlGaN layer has been used to grow high quality GaN layers on 4-in. Si substrates. The use of this technology allows for high mobility AlGaN/GaN heterostructures with electron mobility of 2040 cm(2)/(V.s) at sheet charge density of 8.4 x 10(12) cm(-2). Strain relaxation and dislocation evolution mechanisms have been investigated. It is demonstrated that the large lattice mismatch between the low Al content AlGaN layer and AlN buffer layer could effectively promote the edge dislocation inclination with relatively large bend angles and therefore significantly reduce the dislocation density in the GaN epilayer. Our results show a great potential for fabrication of low-cost and high performance GaN-on-Si power devices. (C) 2015 AIP Publishing LLC.
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