期刊
JOURNAL OF THE TAIWAN INSTITUTE OF CHEMICAL ENGINEERS
卷 42, 期 4, 页码 669-673出版社
ELSEVIER
DOI: 10.1016/j.jtice.2010.12.001
关键词
p-Type Fe2O3; alpha-Fe2O3; Mg doping; p-Type semiconductor
资金
- National Science Council of R.O.C. in Taiwan
In order to prevent the formation of unfavorable Fe3O4 on the surface, an effective way for the preparation of p-type alpha-Fe2O3 pellets by Mg doping (from MgO) in pure oxygen atmosphere between 1173 and 1273 K has been developed. The pellet properties were compared with those prepared in air. The effects of the calcination temperature, holding time during the calcination process, and Mg doping amount have been investigated. The samples were characterized by X-ray diffraction and UV-vis diffuse reflectance for determining the type of iron oxides in the bulk and on the surface. The semiconductor properties were determined by Hall measurement. The results from this research indicate that pure oxygen at 3 atmosphere pressure should be used for suppressing Fe3O4 production on pellet surface. Either 20 h of holding time at 1173 K or 0 h at 1273 K is sufficient for the preparation of p-type alpha-Fe2O3 pellets. Although the higher carrier concentration can be prepared by using more MgO in the pellets, the higher resistivity and the lower electron mobility are the drawbacks. Therefore, only 0.2 at% Mg doped in alpha-Fe2O3 in pure oxygen pressure is suggested for the preparation of p-type semiconductor. (C) 2010 Taiwan Institute of Chemical Engineers. Published by Elsevier B.V. All rights reserved.
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