期刊
JOURNAL OF THE SOCIETY FOR INFORMATION DISPLAY
卷 22, 期 6, 页码 310-315出版社
WILEY-BLACKWELL
DOI: 10.1002/jsid.250
关键词
amorphous oxide semiconductors; contact metal; a-IGZO; TFTs; bias-stress stability
In this work, we compared the thin-film transistor (TFT) characteristics of amorphous InGaZnO TFTs with six different source-drain (S/D) metals (MoCr, TiW, Ni, Mo, Al, and Ti/Au) fabricated in bottom-gate bottom-contact (BGBC) and bottom-gate top-contact (BGTC) configurations. In the BGTC configuration, nearly every metal can be injected nicely into the a-IGZO leading to nice TFT characteristics; however, in the BGBC configuration, only Ti/Au is injected nicely and shows comparable TFT characteristics. We attribute this to the metal-containing deposits in the channel and the contact oxidation during a-IGZO layer sputtering in the presence of S/D metal. In bias-stress stability, TFTs with Ti/Au S/D metal showed good results in both configurations; however, in the BGTC configuration, not all the TFTs showed as good bias results as Ti/Au S/D metal TFTs. We attribute this to backchannel interface change, which happened because of the metal-containing deposits at the backchannel during the final the SiO2 passivation.
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