期刊
APPLIED PHYSICS LETTERS
卷 106, 期 5, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.4907169
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资金
- Army Research Office [W911NF-13-1-0224]
- Air Force Office of Scientific Research [FA9550-13-1-0114]
- NSF [DMR-1207053]
- IRICE program at UC Berkeley
Highly crystalline thin films of MoS2 were prepared over large area by pulsed laser deposition down to a single monolayer on Al2O3 (0001), GaN (0001), and SiC-6H (0001) substrates. X-ray diffraction and selected area electron diffraction studies show that the films are quasi-epitaxial with good out-of-plane texture. In addition, the thin films were observed to be highly crystalline with rocking curve full width half maxima of 0.01 degrees, smooth with a RMS roughness of 0.27 nm, and uniform in thickness based on Raman spectroscopy. From transport measurements, the as-grown films were found to be p-type. (C) 2015 AIP Publishing LLC.
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