相关参考文献
注意:仅列出部分参考文献,下载原文获取全部文献信息。Lasing in direct-bandgap GeSn alloy grown on Si
S. Wirths et al.
NATURE PHOTONICS (2015)
Compositional dependence of the bowing parameter for the direct and indirect band gaps in Ge1-ySny alloys
J. D. Gallagher et al.
APPLIED PHYSICS LETTERS (2014)
Room-temperature electroluminescence from Ge/Ge1-xSnx/Ge diodes on Si substrates
Wei Du et al.
APPLIED PHYSICS LETTERS (2014)
Advances in Light Emission from Group-IV Alloys via Lattice Engineering and n-Type Doping Based on Custom-Designed Chemistries
C. L. Senaratne et al.
CHEMISTRY OF MATERIALS (2014)
GeSn Heterojunction LEDs on Si Substrates
Michael Oehme et al.
IEEE PHOTONICS TECHNOLOGY LETTERS (2014)
Ge1-ySny (y=0.01-0.10) alloys on Ge-buffered Si: Synthesis, microstructure, and optical properties
C. L. Senaratne et al.
JOURNAL OF APPLIED PHYSICS (2014)
Compositional dependence of the direct and indirect band gaps in Ge1-ySny alloys from room temperature photoluminescence: implications for the indirect to direct gap crossover in intrinsic and n-type materials
L. Jiang et al.
SEMICONDUCTOR SCIENCE AND TECHNOLOGY (2014)
SiGeSn growth studies using reduced pressure chemical vapor deposition towards optoelectronic applications
S. Wirths et al.
THIN SOLID FILMS (2014)
Infrared electroluminescence from GeSn heterojunction diodes grown by molecular beam epitaxy
Jay Prakash Gupta et al.
APPLIED PHYSICS LETTERS (2013)
Mid-infrared electroluminescence from a Ge/Ge0.922Sn0.078/Ge double heterostructure p-i-n diode on a Si substrate
H. H. Tseng et al.
APPLIED PHYSICS LETTERS (2013)
Structural investigations of SiGe epitaxial layers grown by molecular beam epitaxy on Si(001) and Ge(001) substrates: II-Transmission electron microscopy and atomic force microscopy
N. Faleev et al.
JOURNAL OF CRYSTAL GROWTH (2013)
GeSn Heterojunction Diode: Detector and Emitter in One Device
M. Oehme et al.
ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY (2013)
Direct gap electroluminescence from Si/Ge1-ySny p-i-n heterostructure diodes
R. Roucka et al.
APPLIED PHYSICS LETTERS (2011)
Room-Temperature Electroluminescence From GeSn Light-Emitting Pin Diodes on Si
M. Oehme et al.
IEEE PHOTONICS TECHNOLOGY LETTERS (2011)
Synthesis of butane-like SiGe hydrides: Enabling precursors for CVD of Ge-rich semiconductors
Andrew V. G. Chizmeshya et al.
JOURNAL OF THE AMERICAN CHEMICAL SOCIETY (2006)