相关参考文献
注意：仅列出部分参考文献，下载原文获取全部文献信息。First-principles study of 5H-BN
Kazuaki Kobayashi et al.
JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN (2007)
First-principles study of various hexagonal BN phases
Kazuaki Kobayashi et al.
JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN (2007)
The electronic properties of SiCAlN quaternary compounds
Z. Q. Liu et al.
EUROPEAN PHYSICAL JOURNAL B (2007)
New type of BN nanoparticles and films prepared by synergetic deposition processes using laser and plasma: the nanostructures, properties and growth mechanisms
Shojiro Komatsu
JOURNAL OF PHYSICS D-APPLIED PHYSICS (2007)
Epitaxial growth of 6H-AlN on M-plane SiC by plasma-assisted molecular beam epitaxy
D. M. Schaadt et al.
JOURNAL OF CRYSTAL GROWTH (2007)
High-quality nonpolar 4H-AlN grown on 4H-SiC (11(2)over-bar20) substrate by molecular-beam epitaxy
Masahiro Horita et al.
APPLIED PHYSICS LETTERS (2006)
Enumeration of polytypes MX and MX2 through the use of the symmetry of the Zhdanov symbol
JE Iglesias
ACTA CRYSTALLOGRAPHICA SECTION A (2006)
The electronic structure and spectroscopic properties of 3C, 2H, 4H, 6H, 15R and 21R polymorphs of SiC
W. Y. Ching et al.
MATERIALS SCIENCE AND ENGINEERING A-STRUCTURAL MATERIALS PROPERTIES MICROSTRUCTURE AND PROCESSING (2006)
Epitaxy of nonpolar AlN on 4H-SiC (1-100) substrates
R Armitage et al.
APPLIED PHYSICS LETTERS (2006)
A first principle study of band structure of III-nitride compounds
R Ahmed et al.
PHYSICA B-CONDENSED MATTER (2005)
Microstructural and electrical resistance analysis of laser-processed SiC substrates for wide bandgap semiconductor materials
IA Salama et al.
JOURNAL OF MATERIALS SCIENCE (2005)
Electronic and lattice properties of layered hexagonal compounds under anisotropic compression: A first-principles study
K Kobayashi
MATERIALS TRANSACTIONS (2005)
Tight-binding calculations of the band structure and total energies of the various polytypes of silicon carbide
N Bernstein et al.
PHYSICAL REVIEW B (2005)
Electron field emission from self-organized micro-emitters of sp3-bonded 5H boron nitride with very high current density at low electric field
S Komatsu et al.
JOURNAL OF PHYSICAL CHEMISTRY B (2004)
Electronic structure of wurtzite and zinc-blende AlN
P Jonnard et al.
EUROPEAN PHYSICAL JOURNAL B (2004)
4H-polytype AlN grown on 4H-SiC(11(2)over-bar0) substrate by polytype replication
N Onojima et al.
APPLIED PHYSICS LETTERS (2003)
Pressure induced phase transitions of BNs
K Shirai et al.
PHYSICA STATUS SOLIDI B-BASIC RESEARCH (2003)
Electronic band structure and X-ray spectra of boron nitride polytypes
VV Ilyasov et al.
PHYSICS OF THE SOLID STATE (2003)
Highly crystalline 5H-polytype of sp3-bonded boron nitride prepared by plasma-packets-assisted pulsed-laser deposition:: An ultraviolet light emitter at 225 nm
S Komatsu et al.
APPLIED PHYSICS LETTERS (2002)
Ab initio calculation of SiC polytypes
ZY Jiang et al.
SOLID STATE COMMUNICATIONS (2002)
A database for norm-conserving pseudopotential (NCPS2K): Application to rare gas atoms
K Kobayashi
MATERIALS TRANSACTIONS (2001)
First-principles study of the stability of BN and C
A Janotti et al.
PHYSICAL REVIEW B (2001)
Effective electronic masses in wurtzite and zinc-blende GaN and AlN
C Persson et al.
JOURNAL OF CRYSTAL GROWTH (2001)
Growth of 5H-type silicon carbide whisker
YY Peng et al.
MATERIALS RESEARCH BULLETIN (2001)
分享论文
