III-V photonic crystal wire cavity laser on silicon wafer

We report on the modeling and experimental characterization of an InP-based photonic crystal wire cavity laser bonded to a silicon wafer. Simulations give an insight into the variation of the resonant mode frequency and the dependence of the Q-factor on the geometrical parameters of the laser cavity. Calculated and measured Q-factors are of the order of 10(4). A low threshold laser operation is demonstrated. (C) 2010 Optical Society of America