期刊
APPLIED PHYSICS LETTERS
卷 106, 期 16, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.4918762
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资金
- Swiss National Science Foundation under Div II [200021-153174]
- Swiss National Science Foundation (SNF) [200021_153174] Funding Source: Swiss National Science Foundation (SNF)
Control over the localised conductance recently observed at ferroelectric domain walls is key for their integration into potential nanoelectronics devices. Using a combination of piezoresponse force microscopy and local conductance mapping, we demonstrate switching between conducting and insulating behavior at 180 degrees domain walls in epitaxial Pb(Zr0.2Ti0.8)O-3 thin films subjected to ultrahigh vacuum thermal annealing or exposed to ambient conditions, respectively. The reversibility of this behavior is demonstrated in repeated annealing-exposure cycles. To explain these observations, we propose a mechanism based on changes in electrostatic and chemical boundary conditions through oxygen vacancy redistribution and the removal of surface adsorbates. (C) 2015 AIP Publishing LLC.
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