Towards reversible control of domain wall conduction in Pb(Zr0.2Ti0.8)O3 thin films

Control over the localised conductance recently observed at ferroelectric domain walls is key for their integration into potential nanoelectronics devices. Using a combination of piezoresponse force microscopy and local conductance mapping, we demonstrate switching between conducting and insulating behavior at 180 degrees domain walls in epitaxial Pb(Zr0.2Ti0.8)O-3 thin films subjected to ultrahigh vacuum thermal annealing or exposed to ambient conditions, respectively. The reversibility of this behavior is demonstrated in repeated annealing-exposure cycles. To explain these observations, we propose a mechanism based on changes in electrostatic and chemical boundary conditions through oxygen vacancy redistribution and the removal of surface adsorbates. (C) 2015 AIP Publishing LLC.