Preparation and Characterization of BiFeO3 Thin Films Deposited on ITO Substrates by Using Pulsed Laser Deposition

Polycrystalline BiFeO3 thin films were prepared on indium-tin-oxide (ITO)-coated glass substrates by. using pulsed laser deposition (PLD). The X-ray diffraction (XRD) pattern showed a polycrystalline perovskite phase and a (010) preferred orientation. A higher deposition temperature was required to crystallize for the BFO thin film on an ITO substrate compared to the BFO thin film grown on a Pt substrate, the grain size was smaller than that of the BFO thin film on Pt substrate, and the leakage current density was less. The optical transmittance was about 80% around 780 nm, and the direct band gap (E-g) was 2.72 +/- 0.03 eV. The P - E hysteresis loop of the BFO thin film on an ITO substrate was obtained at RT, and the polarization difference at zero electric field (2P(ro)), corresponding to the double remanent polarization was 140 mu C/cm(2). The M - H hysteresis loop was obtained at RT, and the antiferromagnetic behavior was little affected by using different substrates.