期刊
JOURNAL OF THE KOREAN PHYSICAL SOCIETY
卷 59, 期 2, 页码 470-473出版社
KOREAN PHYSICAL SOC
DOI: 10.3938/jkps.59.470
关键词
Metal transfer; Pentacene diode; Organic rectifier; Transfer printing; Schottky diode
We fabricated a pentacene diode with a transferred top electrode and demonstrated the pentacene rectifier. A Au top electrode was formed successfully on the MoO3/pentacene layer by using transfer printing. The current density of the transferred diode was 100 times lower than that of the evaporated one. The rectifier with the transferred electrode operated well at 14 MHz, and output voltage was 2.5 V when a 10-V input voltage was applied. Although the device performance of transferred diode was lower than that of the evaporated one due to poor contact and degradation of the pentacene film, further optimization of the transfer process may improve the device performance.
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