期刊
JOURNAL OF THE KOREAN PHYSICAL SOCIETY
卷 57, 期 6, 页码 1432-1436出版社
KOREAN PHYSICAL SOC
DOI: 10.3938/jkps.57.1432
关键词
Resistive switching; SrTiO3; Switching speed; Retention
资金
- Korea government [2010-0019136]
- Ewha Womans University
We investigated the resistive switching behaviors of metal/oxide junctions consisting of Pt electrodes and Nb-doped SrTiO3(001) single crystals. The doping level affected the resistive switching ratio and the transport mechanism (thermionic emission for low doping and thermionic field emission for high doping). Pulse-mode switching experiments showed that an increase in the interface electric field by several times could enhance the switching speed by hundreds of times. The dependence of the retention time on the doping ratio was also examined. All the results suggested that ionic migration and carrier trapping could explain the resistive switching characteristics.
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