期刊
JOURNAL OF THE KOREAN PHYSICAL SOCIETY
卷 55, 期 1, 页码 232-235出版社
KOREAN PHYSICAL SOC
DOI: 10.3938/jkps.55.232
关键词
Matrix metalloproteinase-9 (MMP-9); Gate effect; Field effect transistor (FET); Nanowire; Streptavidin-biotin binding
资金
- National Research Foundation of Korea [과C6A1805, 2008-0061341, 2009-0094037] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
We studied the electric detection of a biomarker by using p-type Si-nanowire-based field-effect transistors (FETs) for biological applications. A combination of electron-beam lithography and a lift-off process was utilized to fabricate individual 50-nm-thick Si nanowire FETs. The gate-dependent I - V-SD curves revealed that the conductance of a Si-nanowire FET increased with increasing negative V-G. The conductance of the Si nanowire FET depended upon the existence of negatively charged streptavidin binding to a biotin with a peptide and Matrix metalloproteinase-9 (MMP-9), cutting the peptide. Our results suggest that Si-nanowire FETs can be used to detect MMP-9 activity.
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