期刊
APPLIED PHYSICS LETTERS
卷 106, 期 12, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.4916028
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资金
- Ministry of Science and Technology of Taiwan [NSC99-2627-E-006-003, NSC98-2221-E-006-213-MY3, NSC NSC101-2221-E-006-141-MY3, NSC102-222-E-006-182-MY3, 103CE03]
Using the biomaterial of Al-chelated gelatin (ACG) prepared by sol-gel method in the ITO/ACG/ITO structure, a highly transparent resistive random access memory (RRAM) was obtained. The transmittance of the fabricated device is approximately 83% at 550 nm while that of Al/gelatin/ITO is opaque. As to the ITO/gelatin/ITO RRAM, no resistive switching behavior can be seen. The ITO/ACG/ITO RRAM shows high ON/OFF current ratio (>10(5)), low operation voltage, good uniformity, and retention characteristics at room temperature and 85 degrees C. The mechanism of the ACG-based memory devices is presented. The enhancement of these electrical properties can be attributed to the chelate effect of Al ions with gelatin. Results show that transparent ACG-based memory devices possess the potential for next-generation resistive memories and bio-electronic applications. (C) 2015 AIP Publishing LLC.
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