期刊
JOURNAL OF THE EUROPEAN CERAMIC SOCIETY
卷 32, 期 12, 页码 3423-3434出版社
ELSEVIER SCI LTD
DOI: 10.1016/j.jeurceramsoc.2012.04.016
关键词
Nanometric cutting; Ductile regime machining; Tool wear; SiC; Silicon
资金
- EPSRC [EP/I033424/1] Funding Source: UKRI
- Engineering and Physical Sciences Research Council [EP/I033424/1] Funding Source: researchfish
The influence of polymorphism on nanometric machinability of single crystal silicon carbide (SiC) has been investigated through molecular dynamics (MD) simulation. The simulation results are compared with silicon as a reference material. Cutting hardness was adopted as a quantifier of the machinability of the polytypes of single crystal SiC. 3C-SiC offered highest cutting resistance (similar to 2.9 times that of silicon) followed by the 4H-SiC (similar to 2.8 times that of silicon) whereas 6H-SiC (similar to 2.1 times that of silicon) showed the least. Despite its high cutting resistance, 4H-SiC showed the minimum sub-surface crystal lattice deformed layer depth, in contrast to 6H-SiC. Further analysis of temperatures in the cutting zone and the percentage tool wear indicated that single point diamond turning (SPDT) of single crystal SiC could be limited to either 6H-SiC or 4H-SiC depending upon quality and cost considerations as these were found to be more responsive and amenable to SPDT compared to single crystal 3C-SiC. (c) 2012 Elsevier Ltd. All rights reserved.
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