期刊
JOURNAL OF THE EUROPEAN CERAMIC SOCIETY
卷 32, 期 16, 页码 4401-4406出版社
ELSEVIER SCI LTD
DOI: 10.1016/j.jeurceramsoc.2012.07.001
关键词
SiC; Electrical properties; Hot-pressing; Nitrogen-doping; Microstructure-final
资金
- Fundamental R&D Program for Technology of World Premier Materials (WPM)
- Ministry of Knowledge Economy, Republic of Korea
The influence of Y2O3 addition on electrical properties of beta-SiC ceramics has been investigated. Polycrystalline SiC samples obtained by hot-pressing SiC-Y2O3 powder mixtures in nitrogen (N) atmosphere contain Y2O3 clusters segregated between SiC grains. Y2O3 forms a Y-Si-oxycarbonitride phase during sintering by reacting with SiO2 and SiC and by dissolution of N from the atmosphere; this induces N doping into the SiC grains during the process of grain growth. The SiC samples exhibit an electrical resistivity of similar to 10(-3) Omega cm and a carrier density of similar to 10(20) cm(-3), which are ascribed to donor states derived from N impurities. The increase in defect density with increasing Y2O3 content is likely to be a main limiting factor of the electrical conductivity of SiC ceramics. (C) 2012 Elsevier Ltd. All rights reserved.
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