相关参考文献
注意：仅列出部分参考文献，下载原文获取全部文献信息。A Review of GaN on SiC High Electron-Mobility Power Transistors and MMICs
Raymond S. Pengelly et al.
IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES (2012)
Nonradiative recombination dynamics in InGaN/GaN LED defect system
A. E. Chernyakov et al.
SUPERLATTICES AND MICROSTRUCTURES (2009)
Deep traps in GaAs/InGaAs quantum wells and quantum dots, studied by noise spectroscopy
Vas. P. Kunets et al.
JOURNAL OF APPLIED PHYSICS (2008)
Identification of donors, acceptors, and traps in bulk-like HVPE GaN
DC Look et al.
JOURNAL OF CRYSTAL GROWTH (2005)
Effect of the surface and barrier defects on the AlGaN/GaN HEMT low-frequency noise performance
AV Vertiatchikh et al.
IEEE ELECTRON DEVICE LETTERS (2003)
Trapping effects in GaN and SiC microwave FETs
SC Binari et al.
PROCEEDINGS OF THE IEEE (2002)
Evolution of deep centers in GaN grown by hydride vapor phase epitaxy
ZQ Fang et al.
APPLIED PHYSICS LETTERS (2001)
Hydrogen passivation of deep levels in n-GaN
A Hierro et al.
APPLIED PHYSICS LETTERS (2000)
The effect of surface passivation on the microwave characteristics of undoped AlGaN/GaN HEMT's
BM Green et al.
IEEE ELECTRON DEVICE LETTERS (2000)
Optically and thermally detected deep levels in n-type Schottky and p+-n GaN diodes
A Hierro et al.
APPLIED PHYSICS LETTERS (2000)
分享论文
