相关参考文献
注意:仅列出部分参考文献,下载原文获取全部文献信息。Conductance Spectroscopy Study on Interface Electronic States of HfO2/Si Structures: Comparison with Interface Dipole
Noriyuki Miyata et al.
APPLIED PHYSICS EXPRESS (2009)
Band gap enhancement and electrical properties of La2O3 films doped with Y2O3 as high-k gate insulators
Yi Zhao et al.
APPLIED PHYSICS LETTERS (2009)
Investigation of stability of the effective work function on LaAlO3 and La2Hf2O7
Masamichi Suzuki et al.
JOURNAL OF APPLIED PHYSICS (2009)
Effects of thermal annealing on the band alignment of lanthanum aluminate on silicon investigated by x-ray photoelectron spectroscopy
Z. Q. Liu et al.
JOURNAL OF APPLIED PHYSICS (2009)
Thermal annealing effects on the atomic layer deposited LaAlO3 thin films on Si substrate
Dail Eom et al.
ELECTROCHEMICAL AND SOLID STATE LETTERS (2008)
Effects of annealing on the valence band offsets between hafnium aluminate and silicon
S. Y. Chiam et al.
JOURNAL OF APPLIED PHYSICS (2008)
Band alignment of yttrium oxide on various relaxed and strained semiconductor substrates
S. Y. Chiam et al.
JOURNAL OF APPLIED PHYSICS (2008)
Effects of Y doping on the structural stability and defect properties of cubic HfO2
G. H. Chen et al.
JOURNAL OF APPLIED PHYSICS (2008)
Electrical characteristics of MOSFETs with La2O3/Y2O3 gate stack
Parhat Ahmet et al.
MICROELECTRONICS RELIABILITY (2008)
Origin of flat band voltage shift in HfO2 gate dielectric with La2O3 insertion
K. Kakushima et al.
SOLID-STATE ELECTRONICS (2008)
Coverage dependent reaction of yttrium on silicon and the oxidation of yttrium silicide investigated by x-ray photoelectron spectroscopy
S. Y. Chiam et al.
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A (2007)
Estimation of fixed charge densities in hafnium-silicate gate dielectrics
Vidya S. Kaushik et al.
IEEE TRANSACTIONS ON ELECTRON DEVICES (2006)
Investigation of silicon diffusion into yttrium using x-ray photoelectron spectroscopy
SY Chiam et al.
APPLIED PHYSICS LETTERS (2006)
Interface trap density in amorphous La2Hf2O7/SiO2 high-κ gate stacks on Si
B Mereu et al.
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING (2005)
Interfacial layer-induced mobility degradation in high-k transistors
G Bersuker et al.
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS (2004)
Extraction of the capacitance of ultrathin high-K gate dielectrics
S Kar
IEEE TRANSACTIONS ON ELECTRON DEVICES (2003)
XPS studies of SiO2/Si system under external bias
B Ulgut et al.
JOURNAL OF PHYSICAL CHEMISTRY B (2003)
Formation of LaAlO3 films on Si(100) substrates using molecular beam deposition
BE Park et al.
APPLIED PHYSICS LETTERS (2003)
Properties of La-silicate high-K dielectric films formed by oxidation of La on silicon
T Gougousi et al.
JOURNAL OF APPLIED PHYSICS (2003)
Photoemission study of Zr- and Hf-silicates for use as high-κ oxides:: Role of second nearest neighbors and interface charge
RL Opila et al.
APPLIED PHYSICS LETTERS (2002)
Dielectric functions and optical bandgaps of high-K dielectrics for metal-oxide-semiconductor field-effect transistors by far ultraviolet spectroscopic ellipsometry
SG Lim et al.
JOURNAL OF APPLIED PHYSICS (2002)
Variation in the fixed charge density of SiOx/ZrO2 gate dielectric stacks during postdeposition oxidation
M Houssa et al.
APPLIED PHYSICS LETTERS (2000)
Effects of rapid thermal annealing in vacuum on electrical properties of thin Ta2O5-Si structures
D Spassov et al.
MICROELECTRONICS JOURNAL (2000)