High Temperature Atomic Layer Deposition of Ruthenium from N,N-Dimethyl-1-ruthenocenylethylamine

Ruthenium thin films were grown by atomic layer deposition from N,N-dimethyl-1-ruthenocenylethylamine precursor. The growth was examined in the substrate temperature range of 325-500 degrees C. The growth rate increased with the substrate temperature but was quite stable between 400 and 450 degrees C. The films typically consisted of polycrystalline hexagonal ruthenium metal with a resistivity in the range of 10-20 mu Omega cm when the film thickness was 10 nm and above. A resistivity of 49 mu Omega cm could be achieved in the film as thin as 4 nm. Measurements on Al/Al(2)O(3)/Ru metal-insulator-metal (MIM) capacitors with Ru films as metal electrodes revealed a capacitive voltage behavior typical of MIM structures and appreciably high breakdown voltages. (C) 2009 The Electrochemical Society. [DOI: 10.1149/1.3251285] All rights reserved.