相关参考文献
注意:仅列出部分参考文献,下载原文获取全部文献信息。Band offsets of ultrathin high-κ oxide films with Si
Eric Bersch et al.
PHYSICAL REVIEW B (2008)
Internal photoemission at interfaces of high-κ insulators with semiconductors and metals
V. V. Afanas'ev et al.
JOURNAL OF APPLIED PHYSICS (2007)
Negative oxygen vacancies in HfO2 as charge traps in high-k stacks
J. L. Gavartin et al.
APPLIED PHYSICS LETTERS (2006)
Electronic properties of the Zr-ZrO2-SiO2-Si(100) gate stack structure
CC Fulton et al.
JOURNAL OF APPLIED PHYSICS (2006)
High dielectric constant gate oxides for metal oxide Si transistors
J Robertson
REPORTS ON PROGRESS IN PHYSICS (2006)
Intrinsic band edge traps in nano-crystalline HfO2 gate dielectrics
G Lucovsky et al.
MICROELECTRONIC ENGINEERING (2005)
Band offset measurements of the GaN (0001)/HfO2 interface
TE Cook et al.
JOURNAL OF APPLIED PHYSICS (2003)
Soft x-ray photoemission studies of Hf oxidation
S Suzer et al.
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A (2003)
Ultrathin (<4 nm) SiO2 and Si-O-N gate dielectric layers for silicon microelectronics:: Understanding the processing, structure, and physical and electrical limits
ML Green et al.
JOURNAL OF APPLIED PHYSICS (2001)
Band offsets of wide-band-gap oxides and implications for future electronic devices
J Robertson
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B (2000)