期刊
JOURNAL OF THE ELECTROCHEMICAL SOCIETY
卷 155, 期 2, 页码 H76-H79出版社
ELECTROCHEMICAL SOC INC
DOI: 10.1149/1.2811859
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We demonstrate a p-MOSFET fabricated on Ge/GaAs heterostructure. The Ge layer was epitaxially grown on GaAs substrate by high vacuum chemical vapor deposition. High-quality single crystalline Ge film confirmed by X-ray diffraction and transmission electron microscopy was achieved with a very low root-mean-square roughness of 5 angstrom measured by atomic force microscopy. Secondary ion mass spectrometry results indicate that no Ga and As out-diffusion to Ge epi layer can be observed. By employing silane passivation, Ge p-MOSFET with TaN/HfO2 gate stack was fabricated on Ge/GaAs heterostructure. The resultant transistor exhibited excellent subthreshold swing of 86 mV/dec and 1(on)/1(off) ratio greater than four orders. Additionally, similar to 1.7 times hole mobility enhancement over the universal curve of Si was achieved. (c) 2007 The Electrochemical Society.
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