相关参考文献
注意：仅列出部分参考文献，下载原文获取全部文献信息。Carrier dynamics in inhomogeneously broadened InAs/AlGaInAs/InP quantum-dot semiconductor optical amplifiers
O. Karni et al.
APPLIED PHYSICS LETTERS (2014)
Stability of Optical Frequency Comb Generated With InAs/InP Quantum-Dash-Based Passive Mode-Locked Lasers
Kamel Merghem et al.
IEEE JOURNAL OF QUANTUM ELECTRONICS (2014)
23 and 39 GHz low phase noise monosection InAs/InP (113)B quantum dots mode-locked lasers
K. Klaime et al.
OPTICS EXPRESS (2013)
High performance mode locking characteristics of single section quantum dash lasers
Ricardo Rosales et al.
OPTICS EXPRESS (2012)
Effect of the Shape of InAs Nanostructures on the Characteristics of InP-Based Buried Heterostructure Semiconductor Optical Amplifiers
Dieter Franke et al.
APPLIED PHYSICS EXPRESS (2011)
High gain 1.55 μm diode lasers based on InAs quantum dot like active regions
C. Gilfert et al.
APPLIED PHYSICS LETTERS (2011)
InAs/InP Quantum-Dot Passively Mode-Locked Lasers for 1.55-μm Applications
Ricardo Rosales et al.
IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS (2011)
Injection-Locking Properties of InAs/InP-Based Mode-Locked Quantum-Dash Lasers at 21 GHz
Ehsan Sooudi et al.
IEEE PHOTONICS TECHNOLOGY LETTERS (2011)
Ultra-high repetition rate InAs/InP quantum dot mode-locked lasers
Z. G. Lu et al.
OPTICS COMMUNICATIONS (2011)
Time-resolved amplified spontaneous emission in quantum dots
J. Gomis-Bresco et al.
APPLIED PHYSICS LETTERS (2010)
Chromatic Dispersion in InGaAsP Semiconductor Optical Amplifiers
Patrick Runge et al.
IEEE JOURNAL OF QUANTUM ELECTRONICS (2010)
Recovery time scales in a reversed-biased quantum dot absorber
Evgeny A. Viktorov et al.
APPLIED PHYSICS LETTERS (2009)
High Performance InP-Based Quantum Dash Semiconductor Mode-Locked Lasers for Optical Communications
Guang-Hua Duan et al.
BELL LABS TECHNICAL JOURNAL (2009)
Passively Mode-Locked 4.6 and 10.5 GHz Quantum Dot Laser Diodes Around 1.55 μm With Large Operating Regime
Martijn J. R. Heck et al.
IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS (2009)
Quantum dot based nanophotonics and nanoelectronics
D. Bimberg
ELECTRONICS LETTERS (2008)
RF linewidth in monolithic passively mode-locked semiconductor laser
Fabien Kefelian et al.
IEEE PHOTONICS TECHNOLOGY LETTERS (2008)
Ultrafast electroabsorption dynamics in an InAs quantum dot saturable absorber at 1.3 μm
D. B. Malins et al.
APPLIED PHYSICS LETTERS (2006)
Effects of two-photon absorption on carrier dynamics in quantum-dot optical amplifiers
H Ju et al.
APPLIED PHYSICS B-LASERS AND OPTICS (2006)
Quantum dots for lasers, amplifiers and computing
D Bimberg
JOURNAL OF PHYSICS D-APPLIED PHYSICS (2005)
35 GHz mode-locking of 1.3 μm quantum dot lasers
M Kuntz et al.
APPLIED PHYSICS LETTERS (2004)
Linewidth enhancement factor in InGaAs quantum-dot amplifiers
S Schneider et al.
IEEE JOURNAL OF QUANTUM ELECTRONICS (2004)
1.3 μm InAs quantum dot laser with To=161 K from 0 to 80 °C
OB Shchekin et al.
APPLIED PHYSICS LETTERS (2002)
Close-to-ideal device characteristics of high-power InGaAs/GaAs quantum dot lasers
RL Sellin et al.
APPLIED PHYSICS LETTERS (2001)
Mode-locking of lasers
HA Haus
IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS (2000)
分享论文
