期刊
APPLIED PHYSICS LETTERS
卷 107, 期 26, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.4939437
关键词
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资金
- National Natural Science Foundation of China [61274017, 61274009, 51572241, 51572033]
- China Postdoctoral Science Foundation [2014M550661]
- Program for Changjiang Scholars and Innovative Research Team in University (PCSIRT) [IRT13097]
- 521 Talent Program of Zhejiang Sci-Tech University
Negative differential resistance (NDR) and bipolar resistive switching (RS) phenomena were observed in Au/Ga2O3-x/Nb: SrTiO3/Au heterostructures fabricated by growing amorphous gallium oxide thin films on 0.7% Nb-doped SrTiO3 substrates using pulsed laser deposition technique. The RS behavior is reproducible and stable without the forming process. The NDR phenomenon happened during the course of RS from low resistance state to high resistance state and was dependent much on the applied forward bias. The bias dependent charge releasing from oxygen vacancies was considered to contribute to the NDR behavior. The results show that there is a very close relationship between NDR and RS. (C) 2015 AIP Publishing LLC.
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