4.6 Article

Oxidation of ultrathin GaSe

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APPLIED PHYSICS LETTERS
卷 107, 期 17, 页码 -

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AMER INST PHYSICS
DOI: 10.1063/1.4934592

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  1. LDRD program at Sandia National Laboratories (SNL)
  2. U.S. DOE National Nuclear Security Administration [DE-AC04-94AL85000]

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Oxidation of exfoliated gallium selenide (GaSe) is investigated through Raman, photoluminescence, Auger, and X-ray photoelectron spectroscopies. Photoluminescence and Raman intensity reductions associated with spectral features of GaSe are shown to coincide with the emergence of signatures emanating from the by-products of the oxidation reaction, namely, Ga2Se3 and amorphous Se. Photoinduced oxidation is initiated over a portion of a flake highlighting the potential for laser based patterning of two-dimensional heterostructures via selective oxidation. (C) 2015 AIP Publishing LLC.

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