期刊
JOURNAL OF THE AMERICAN CHEMICAL SOCIETY
卷 140, 期 39, 页码 12501-12510出版社
AMER CHEMICAL SOC
DOI: 10.1021/jacs.8b06395
关键词
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资金
- US-Israel Binational Science Foundation (BSF) [AGMT-2012250///02]
- ONR [MURI N00014-11-1-0690]
- Northwestern U. MRSEC [NSF DMR-1720139]
- Flexterra Corp.
- Shenzhen Peacock Plan project [KQTD20140630110339343]
- NSF-DMREF program [DMR-1729779]
- XSEDE [DMR-080007]
- China Scholarship Council
- National Natural Science Foundation of China [U1504625]
- youth backbone teacher training program in He'nan province [2017GGJS021]
- Soft and Hybrid Nanotechnology Experimental (SHyNE) Resource [NSF NNCI-1542205]
- MRSEC program at the Materials Research Center [NSF DMR-1720139]
- International Institute for Nanotechnology (IIN)
- Keck Foundation
- State of Illinois, through the IIN
We report the results of a study to enhance metal oxide (MO) thin-film transistor (TFT) performance by doping both the semiconductor (In2O3) and gate dielectric (Al2O3) layers with boron (yielding IBO and ABO, respectively) and provide the first quantitative analysis of how B doping affects charge transport in these MO dielectric and semiconducting matrices. The impact of 1-9 atom % B doping on MO microstructure, morphology, oxygen defects, charge transport, and dielectric properties is analyzed together, in detail, by complementary experimental (microstructural, electrical) and theoretical (ab initio MD, DFT) methods. The results indicate that B doping frustrates In2O3 crystallization while suppressing defects responsible for electron trapping and carrier generation. In the adjacent Al2O3 dielectric, B doping increases the dielectric constant and refractive index while reducing leakage currents. Furthermore, optimized solution-processed TFTs combining IBO channels with 6 atom % B and ABO dielectrics with 10 atom % B exhibit field effect mobilities as high as 11 cm(2) V-1 s(-1), current on/off ratios >10(5), threshold voltages = 0.6 V, and superior bias stress durability.
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