期刊
JOURNAL OF THE AMERICAN CHEMICAL SOCIETY
卷 136, 期 4, 页码 1391-1397出版社
AMER CHEMICAL SOC
DOI: 10.1021/ja408463g
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资金
- Department of Energy [DE-FG02-88ER13937]
- EFRC [DE-SC0001085]
- Center for Functional Nanomaterials, Brookhaven National Laboratory [DE-AC02-98CH10886]
- Air Force Office of Scientific Research [MURI FA955009-1-0705]
- New York State Office of Science, Technology, and Academic Research (NYSTAR)
- National Science Foundation [CHE-10-12058]
- Defense Advanced Research Projects Agency [N66001-12-1-4216]
- Air Force Office for Scientific Research [FA9550-11-1-0010]
- Direct For Mathematical & Physical Scien
- Division Of Chemistry [1012058] Funding Source: National Science Foundation
- U.S. Department of Energy (DOE) [DE-FG02-88ER13937] Funding Source: U.S. Department of Energy (DOE)
Atomic-level details of dopant distributions can significantly influence the material properties. Using scanning tunneling microscopy, we investigate the distribution of substitutional dopants in nitrogen-doped graphene with regard to sublattice occupancy within the honeycomb structure. Samples prepared by chemical vapor deposition (CVD) using pyridine on copper exhibit well-segregated domains of nitrogen dopants in the same sublattice, extending beyond 100 nm. On the other hand, samples prepared by postsynthesis doping of pristine graphene exhibit a random distribution between sublattices. On the basis of theoretical calculations, we attribute the formation of sublattice domains to the preferential attachment of nitrogen to the edge sites of graphene during the CVD growth process. The breaking of sublattice symmetry in doped graphene can have important implications in its electronic applications, such as the opening of a tunable band gap in the material.
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