期刊
APPLIED PHYSICS LETTERS
卷 107, 期 6, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.4928623
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资金
- German Research Council (DFG) [DR832/3-1]
- Engineering and Physical Sciences Research Council [EP/J015296/1] Funding Source: researchfish
- EPSRC [EP/J015296/1] Funding Source: UKRI
We use cyclotron resonance THz-spectroscopy in pulsed magnetic fields up to 63 T to measure the electron effective mass in Si-doped GaAsN semiconductor alloys with nitrogen content up to 0.2%. This technique directly probes the transport properties of the N-modified conduction band, particularly the electron effective mass, which has been discussed controversially in the experimental and theoretical literature. We report a slight increase of the electron effective mass and nonparabolicity with N-content for different photon energies in agreement with the two-level band anticrossing model calculations. Furthermore, we show a pronounced electron mobility drop with increasing N-content. (C) 2015 AIP Publishing LLC.
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