4.8 Article

Record High Hole Mobility in Polymer Semiconductors via Side-Chain Engineering

期刊

JOURNAL OF THE AMERICAN CHEMICAL SOCIETY
卷 135, 期 40, 页码 14896-14899

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AMER CHEMICAL SOC
DOI: 10.1021/ja405112s

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资金

  1. National Research Foundation of Korea (NRF)
  2. Ministry of Education, Science and Technology [2012047047]
  3. Center for Advanced Soft Electronics under the Global Frontier Research Program of the MEST [2012055225]

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Charge carrier mobility is still the most challenging issue that should be overcome to realize everyday organic electronics in the near future. In this Communication, we show that introducing smart side-chain engineering to polymer semiconductors can facilitate intermolecular electronic communication. Two new polymers, P-29-DPPDBTE and P-29-DPPDTSE, which consist of a highly conductive diketopyrrolopyrrole backbone and an extended branching-position-adjusted side chain, showed unprecedented record high hole mobility of 12 cm(2)/(V.s). From photophysical and structural studies, we found that moving the branching position of the side chain away from the backbone of these polymers resulted in increased intermolecular interactions with extremely short pi-pi stacking distances, without compromising solubility of the polymers. As a result, high hole mobility could be achieved even in devices fabricated using the polymers at room temperature.

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