4.8 Article

Ligand Field Effect at Oxiide-Metal Interface on the Chemical Reactivity of Ultrathin Oxide Film Surface

期刊

JOURNAL OF THE AMERICAN CHEMICAL SOCIETY
卷 134, 期 25, 页码 10554-10561

出版社

AMER CHEMICAL SOC
DOI: 10.1021/ja302949j

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资金

  1. Ministry of Education, Culture, Sports, Science, and Technology (MEXT), Japan
  2. Global COE Program (Chemistry Innovation through Cooperation of Science and Engineering), MEXT, Japan
  3. International Program Associate (IPA) of RIKEN

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Ultrathin oxide film is currently one of the paramount candidates for a heterogeneous catalyst because it provides an additional dimension, i.e., film thickness, to control chemical reactivity. Here, we demonstrate that the chemical reactivity of ultrathin MgO film grown on Ag(100) substrate for the dissociation of individual water molecules can be systematically controlled by interface dopants over the film thickness. Density functional theory calculations revealed that adhesion at the oxide-metal interface can be addressed by the ligand field effect and is linearly correlated with the chemical reactivity of the oxide film. In addition, our results indicate that the concentration of dopant at the interface can be controlled by tuning the drawing effect of oxide film. Our study provides not only profound insight into chemical reactivity control of ultrathin oxide film supported by a metal substrate but also an impetus for investigating ultrathin oxide films for a wider range of applications.

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