期刊
JOURNAL OF THE AMERICAN CHEMICAL SOCIETY
卷 134, 期 19, 页码 8018-8021出版社
AMER CHEMICAL SOC
DOI: 10.1021/ja301373e
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资金
- European Union under REA [269167]
- MINECO [ENE2010-121541-C03-1, RYC 2011-09212]
- Juan de la Cierva [JCI-2011-10782]
Improvement of the efficiency of Cu2ZnSnS4 (CZTS)-based solar cells requires the development of specific procedures to remove or avoid the formation of detrimental secondary phases. The presence of these phases is favored by the Zn-rich and Cu-poor conditions that are required to obtain device-grade layers. We have developed a selective chemical etching process based on the use of hydrochloric acid solutions to remove Zn-rich secondary phases from the CZTS film surface, which are partly responsible for the deterioration of the series resistance of the cells and, as a consequence, the conversion efficiency. Using this approach, we have obtained CZTS-based devices with 5.2% efficiency, which is nearly twice that of the devices we have prepared without this etching process.
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