4.8 Article

Large-Area Graphene Single Crystals Grown by Low-Pressure Chemical Vapor Deposition of Methane on Copper

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JOURNAL OF THE AMERICAN CHEMICAL SOCIETY
卷 133, 期 9, 页码 2816-2819

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AMER CHEMICAL SOC
DOI: 10.1021/ja109793s

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  1. Nanoelectronic Research Initiative-SouthWest Academy of Nanoelectronics (NRI-SWAN)
  2. NSF [1006350]
  3. Office of Naval Research
  4. Direct For Mathematical & Physical Scien
  5. Division Of Materials Research [1006350] Funding Source: National Science Foundation

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Graphene single crystals with dimensions of up to 0.5 mm on a side were grown by low-pressure chemical vapor deposition in copper-foil enclosures using methane as a precursor. Low-energy electron microscopy analysis showed that the large graphene domains had a single crystallographic orientation, with an occasional domain having two orientations. Raman spectroscopy revealed the graphene single crystals to be uniform monolayers with a low D-band intensity. The electron mobility of graphene films extracted from field-effect transistor measurements was found to be higher than 4000 cm(2) V(-1) s(-1) at room temperature.

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