期刊
JOURNAL OF THE AMERICAN CHEMICAL SOCIETY
卷 133, 期 49, 页码 19668-19671出版社
AMER CHEMICAL SOC
DOI: 10.1021/ja2091068
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资金
- MARCO MSD
- Intel
- ONR MURI on graphene
- Samsung Electronics
- ONR
- NSF
- U.S. Department of Energy [DE-AC02-05CH11231]
We investigated the chlorine plasma reaction with graphene and graphene nanoribbons and compared it with the hydrogen and fluorine plasma reactions. Unlike the rapid destruction of graphene by hydrogen and fluorine plasmas, much slower reaction kinetics between the chlorine plasma and graphene were observed, allowing for controlled chlorination. Electrical measurements on graphene sheets, graphene nanoribbons, and large graphene films grown by chemical vapor deposition showed p-type doping accompanied by a conductance increase, suggesting nondestructive doping via chlorination. Ab initio simulations were performed to rationalize the differences in fluorine, hydrogen, and chlorine functionalization of graphene.
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