期刊
JOURNAL OF THE AMERICAN CHEMICAL SOCIETY
卷 133, 期 22, 页码 8408-8411出版社
AMER CHEMICAL SOC
DOI: 10.1021/ja200841e
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资金
- NSF [CAREER DMR-0548232]
- Sloan Research Fellowship
- 3M Graduate Research Fellowship
- UVV-Madison NSEC [NSF DMR 0832760]
- Division Of Materials Research
- Direct For Mathematical & Physical Scien [1106184] Funding Source: National Science Foundation
We report the rational synthesis of alpha-FeOOH (goethite) nanowires following a dislocation-driven mechanism by utilizing a continuous-flow reactor and chemical equilibria to maintain constant low supersaturations. The existence of axial screw dislocations and the associated Eshelby twist in the nanowire product were confirmed using bright-/dark-field transmission electron microscopy imaging and twist contour analysis. The alpha-FeOOH nanowires can be readily converted into semiconducting single-crystal but porous alpha-FeOOH (hematite) nanowires via topotactic transformation. Our results indicate that, with proper experimental design, many more useful materials can be grown in one-dimensional morphologies in aqueous solutions via the dislocation-driven mechanism.
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