期刊
JOURNAL OF THE AMERICAN CHEMICAL SOCIETY
卷 133, 期 15, 页码 5623-5625出版社
AMER CHEMICAL SOC
DOI: 10.1021/ja108464s
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资金
- World Class University (WCU) by Ministry of Education, Science and Technology [R31-2008-000-10059-0]
- National Research Foundation of Korea (NRF)
- NRF
- MEST [2009-0094037, 2010-0017853]
- Ministry of Education, Science and Technology [2010-0028128]
- National Research Foundation of Korea [2010-0017853] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
Graphene nanoribbons (GNRs) are fabricated by dip-pen nanolithography and polystyrene etching techniques on a SrTiO3/Nb-doped SrTiO3 substrate. A GNR field-effect transistor (FET) shows bipolar FET behavior with a high mobility and low operation voltage at room temperature because of the atomically flat surface and the large dielectric constant of the insulating SrTiO3 layer, respectively.
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