期刊
JOURNAL OF THE AMERICAN CHEMICAL SOCIETY
卷 133, 期 4, 页码 941-948出版社
AMER CHEMICAL SOC
DOI: 10.1021/ja108277r
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资金
- David and Lucille Packard Foundation
- Texas Instruments Leadership University Fund
- National Science Foundation [0720825]
- Army Research Office
- AFOSR
- Division Of Computer and Network Systems
- Direct For Computer & Info Scie & Enginr [0720825] Funding Source: National Science Foundation
Silicon oxide (SiOx) has been widely used in many electronic systems as a supportive and insulating medium. Here, we demonstrate various electrical phenomena such as resistive switching and related nonlinear conduction, current hysteresis, and negative differential resistance intrinsic to a thin layer of SiOx. These behaviors can largely mimic numerous electrical phenomena observed in molecules and other nanomaterials, suggesting that substantial caution should be paid when studying conduction in electronic systems with SiOx as a component The actual electrical phenomena can be the result of conduction from SiOx at a post soft-breakdown state and not the presumed molecular or nanomaterial component. These electrical properties and the underlying mechanisms are discussed in detail.
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