4.8 Article

Observation of Negative Charge Trapping and Investigation of Its Physicochemical Origin in Newly Synthesized Poly(tetraphenyl)silole Siloxane Thin Films

期刊

JOURNAL OF THE AMERICAN CHEMICAL SOCIETY
卷 133, 期 20, 页码 7764-7785

出版社

AMER CHEMICAL SOC
DOI: 10.1021/ja1108112

关键词

-

资金

  1. Ministry of Education, Science and Technology [2010-0008824]
  2. PLSI supercomputing resources of KISTI (Korea Institute of Science and Technology Information)
  3. MEST
  4. POSTECH
  5. National Research Foundation of Korea [2009-0087138, 과06B1512, 2010-0008824] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)

向作者/读者索取更多资源

A new kind of organic inorganic hybrid polymer, poly(tetraphenyl)silole siloxane, was invented and synthesized for realization of its unique charge trap properties. The organic portions consisting of (tetraphenyl)silole rings were responsible for negative charge trapping, while the Si-O-Si inorganic linkages provided the intrachain energy barrier for controlling electron transport. The polysilole siloxane dielectric thin films were fabricated by spin-coating and curing of the polymers, followed by characterization with spectroscopic ellipsometry (SE), near edge X-ray absorption fine structure spectroscopy (NEXAFS), and photoemission spectroscopy (PES). The abrupt increase in density and decrease in thickness of the thin film at a curing temperature of 100 degrees C was attributed to a thermodynamically preferred state in the nanoscopic arrangement of the polymer chains; this was due to cofacial pi-pi interactions in a skewed manner between peripheral phenyl groups of the (tetraphenyl)silole rings of the adjacent polymer chains. Using the NEXAFS spectrum to assess high electron affinity, the LUMO energy level of the dielectric thin film cured at 150 degrees C was positioned 1 eV above the Fermi energy level (E-F). The electron trapping of the dielectric thin films was confirmed from the positive flat band shift (Delta V-FB) in the capacitance-voltage (C-V) measurements performed within the metal-insulator-semiconductor (MIS) device structure, which strongly verified the polymer design concept. From the simple kinetics model of the electron transport, it was proposed that the flat band shift (Delta V-FB) or trap density of the negative charges (vertical bar rho vertical bar) was logarithmically proportional to the decay constant (beta) for the electron-tunneling process. When a phenyl group of a silole ring in a polymer chain was inserted into the two available phenyl groups of another silole ring in another polymer chain, the electron transfer between the groups was enhanced, decreasing the trap density of the negative charges (vertical bar rho vertical bar). For the thermodynamically preferred state generating the high refractive index, the distance between the two phenyl groups of the adjacent polymer chains was estimated to be in the range of 0.27-0.36 nm.

作者

我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。

评论

主要评分

4.8
评分不足

次要评分

新颖性
-
重要性
-
科学严谨性
-
评价这篇论文

推荐

暂无数据
暂无数据