Phosphorus-Doped Carbon Nitride Solid: Enhanced Electrical Conductivity and Photocurrent Generation

As a new kind of polymeric semiconductors, graphitic carbon nitride (g-C(3)N(4)) and its incompletely condensed precursors are stable up to 550 degrees C in air and have shown promising photovoltaic applications. However, for practical applications, their efficiency, limited e.g. by band gap absorption, needs further improvement. Here we report a structural doping strategy, in which phosphorus heteroatoms were doped into g-C(3)N(4) via carbon sites by polycondensation of the mixture of the carbon nitride precursors and phosphorus source (specifically from 1-butyl-3-methylimidazolium hexaftuorophosphate ionic liquid). Most of the structural features of g-C(3)N(4) were well retained after doping, but electronic features had been seriously altered, which provided not only a much better electrical (dark) conductivity up to 4 orders of magnitude but also an improvement in photocurrent generation by a factor of up to 5. In addition to being active layers in solar cells, such phosphorus-containing scaffolds and materials are also interesting for polymeric batteries as well as for catalysis and as catalytic supports.