期刊
JOURNAL OF THE AMERICAN CHEMICAL SOCIETY
卷 132, 期 39, 页码 13592-13593出版社
AMER CHEMICAL SOC
DOI: 10.1021/ja106134s
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资金
- International Center for Materials Nanoarchitectonics (MANA) of the National Institute for Materials Science (NIMS)
We report on post-synthesis carbon doping of individual boron nitride nanotubes (BNNTs) via in situ electron-beam irradiation inside an energy-filtering 300 keV high-resolution transmission electron microscope. The substitution of C for B and N atoms in the honeycomb lattice was demonstrated through electron energy loss spectroscopy, spatially resolved energy-filtered elemental mapping, and in situ electrical measurements. Substitutional C doping transformed BNNTs from electrical insulators to conductors. In comparison with the existing post-synthesis doping methods for nanoscale materials (e.g., ion implantation and diffusion), the discovered electron-beam-induced doping is a well-controlled, little-damaging, room-temperature, and simple strategy that is expected to demonstrate great promise for post-synthesis doping of diverse nanomaterials in the future.
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