期刊
JOURNAL OF THE AMERICAN CHEMICAL SOCIETY
卷 132, 期 34, 页码 11934-11942出版社
AMER CHEMICAL SOC
DOI: 10.1021/ja9103155
关键词
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资金
- NSF, Materials Research Center of Northwestern University [DMR-0520513]
- ONR [N00014-02-1-0909]
- NSF-NSEC
- NSF-MRSEC
- Keck Foundation
- State of Illinois
- Northwestern University
Optically transparent and mechanically flexible thin-film transistors (TF-TFTs) composed exclusively of amorphous metal oxide films are fabricated on plastic substrates by combining an amorphous Ta2O5/SiOx bilayer transparent oxide insulator (TOI) gate dielectric with an amorphous zinc indium tin oxide (a-ZITO) transparent oxide semiconductor (TOS) channel and a-ZITO transparent oxide conductor (TOC) electrodes. The bilayer gate dielectric is fabricated by the post-cross-linking of vapor-deposited hexachlorodisiloxane-derived films to form thin SiOx layers (v-SiOx) on amorphous Ta2O5 (a-Ta2O5) films grown by ion-assisted deposition at room temperature. The a-Ta2O5/v-SiOx bilayer TOI dielectric integrates the large capacitance of the high dielectric constant a-Ta2O5 layer with the excellent dielectric/semiconductor interfacial compatibility of the v-SiOx layer in a-ZITO TOS-based TF-TFTs. These all-amorphous-oxide TF-TFTs, having a channel length and width of 100 and 2000 mu m, respectively, perform far better than a-Ta2O5-only devices and exhibit saturation-regime field-effect mobilities of similar to 20 cm(2)/V.s, on-currents >10(-4) A, and current on off ratios >10(5). These TFTs operate at low voltages (similar to 4.0 V) and exhibit good visible-region optical transparency and excellent mechanical flexibility.
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