期刊
JOURNAL OF THE AMERICAN CHEMICAL SOCIETY
卷 131, 期 7, 页码 2462-+出版社
AMER CHEMICAL SOC
DOI: 10.1021/ja809848y
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资金
- NanoNed
- NWO
- FCT [SFRH/BPD/34333/2006]
- Fundação para a Ciência e a Tecnologia [SFRH/BPD/34333/2006] Funding Source: FCT
Single-crystal field-effect transistors (FETs) based on a fluorocarbon-substituted dicyanoperylene-3,4:9, 10-bis(dicarboximide) [PDIF-CN2] were fabricated by lamination of the semiconductor crystal on Si-SiO2/PMMA-Au gate-dielectric-contact substrates. These devices were characterized both in vacuum and in the air, and they exhibit electron mobilities of ca. 6-3 and ca. 3-1 cm(2) V-1 s(-1), respectively, I-on:I-off > 10(3), and near-zero threshold voltage.
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